JPH0542729B2 - - Google Patents
Info
- Publication number
- JPH0542729B2 JPH0542729B2 JP20002684A JP20002684A JPH0542729B2 JP H0542729 B2 JPH0542729 B2 JP H0542729B2 JP 20002684 A JP20002684 A JP 20002684A JP 20002684 A JP20002684 A JP 20002684A JP H0542729 B2 JPH0542729 B2 JP H0542729B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic
- mre
- insulating layer
- bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005291 magnetic effect Effects 0.000 claims description 73
- 239000010409 thin film Substances 0.000 claims description 51
- 230000005294 ferromagnetic effect Effects 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 35
- 238000012045 magnetic resonance elastography Methods 0.000 description 35
- 239000010408 film Substances 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229910003271 Ni-Fe Inorganic materials 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000005330 Barkhausen effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000005381 magnetic domain Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- -1 etc. by sputtering Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20002684A JPS6177115A (ja) | 1984-09-25 | 1984-09-25 | 薄膜磁気ヘツド |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20002684A JPS6177115A (ja) | 1984-09-25 | 1984-09-25 | 薄膜磁気ヘツド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6177115A JPS6177115A (ja) | 1986-04-19 |
| JPH0542729B2 true JPH0542729B2 (en]) | 1993-06-29 |
Family
ID=16417577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20002684A Granted JPS6177115A (ja) | 1984-09-25 | 1984-09-25 | 薄膜磁気ヘツド |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6177115A (en]) |
-
1984
- 1984-09-25 JP JP20002684A patent/JPS6177115A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6177115A (ja) | 1986-04-19 |
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